Three dimensional semiconductor memory devices and methods of manufacturing the same

摘要

Nonvolatile memory devices include a vertical stack of nonvolatile memory cells. The vertical stack of nonvolatile memory cells includes a first nonvolatile memory cell having a first gate pattern therein, which is separated from a vertical active region by a first multi-layered dielectric pattern having a first thickness, and a second nonvolatile memory cell having a second gate pattern therein, which is separated from the vertical active region by a second multi-layered dielectric pattern having a second thickness. The second gate pattern is also separated from the first gate pattern by a distance less than a sum of the first and second thicknesses.

主权项

1. A nonvolatile memory device, comprising:
a vertical stack of nonvolatile memory cells on a substrate, said vertical stack of nonvolatile memory cells comprising a first nonvolatile memory cell having a first gate pattern therein separated from a vertical active region by a first multi-layered dielectric pattern having a first thickness, and a second nonvolatile memory cell having a second gate pattern therein separated from the vertical active region by a second multi-layered dielectric pattern having a second thickness equivalent to the first thickness and also separated from the first gate pattern by a portion of the first multi-layered dielectric pattern but not a corresponding portion of the second multi-layer dielectric pattern.