| 发明名称 | Conductive bridge resistive memory device and method of manufacturing the same | ||
| 摘要 | A conductive bridge resistive memory device is provided, comprising a first electrode, a memory layer electrically coupled to the first electrode, an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer, a semiconductor layer disposed between the memory layer and the ion-supplying layer, and a second electrode electrically coupled to the ion-supplying layer. | ||
| 申请公布号 | US8987699(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201313871040 | 申请日期 | 2013.04.26 |
| 申请人 | Macronix International Co., Ltd. | 发明人 | Lee Feng-Min;Lin Yu-Yu;Chien Wei-Chih;Chen Wei-Chen;Lee Ming-Hsiu |
| 分类号 | H01L29/66;H01L45/00;H01L29/861;E04H17/16 | 主分类号 | H01L29/66 |
| 代理机构 | McClure, Qualey & Rodack, LLP | 代理人 | McClure, Qualey & Rodack, LLP |
| 主权项 | 1. A conductive bridge resistive memory device, comprising: a first electrode; a memory layer electrically coupled to the first electrode; an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer; a semiconductor layer disposed between the memory layer and the ion-supplying layer, wherein the semiconductor layer is a multi-layer comprising a p-type semiconductor layer and an n-type semiconductor layer, and the multi-layer allows diffusion therethrough of said ions; and a second electrode electrically coupled to the ion-supplying layer. | ||
| 地址 | Hsinchu TW | ||