Method of manufacturing a semiconductor device with device separation structures

摘要

A method of manufacturing a semiconductor device includes introducing at least a first and a second trench pattern including array trenches from a first surface into a semiconductor substrate, wherein an array isolation portion of the semiconductor substrate separates the first and second trench patterns. A buried gate electrode structure is provided in the first and second trench patterns at a distance to the first surface. In a single etch process, both a device separation trench having a first width is introduced into the array isolation portion and cell separation trenches having at most a second width that is smaller than the first width are introduced into semiconductor fins between the array trenches. Switching devices integrated in the same semiconductor die may be formed in a cost effective way.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
introducing at least a first trench pattern and a second trench pattern from a first surface into a semiconductor substrate, wherein the trench patterns include array trenches and wherein an array isolation portion of the semiconductor substrate separates the first and second trench patterns; providing buried gate electrode structures in the first and second trench patterns; and introducing, in a single etch process, a device separation trench having a first width into the array isolation portion and cell separation trenches having at most a second width smaller than the first width into semiconductor fins between the array trenches.