发明名称 Angled sputtering physical vapor deposition apparatus with wafer holder and wafer holder for an angled sputtering physical vapor deposition apparatus
摘要 A wafer holder including a wafer stage and a wafer stage outer-ring surrounding the wafer stage wherein the wafer stage has a diameter smaller than the diameter of a wafer loaded on the wafer stage, the wafer stage outer-ring has an inner diameter at the upper side of the outer-ring which is larger than the diameter of the wafer loaded on the wafer stage, and the upper surface of the outer-ring lies above the upper surface of the wafer loaded on the wafer stage.
申请公布号 US8986522(B2) 申请公布日期 2015.03.24
申请号 US201113169831 申请日期 2011.06.27
申请人 Canon Anelva Corporation 发明人 Wickramanayaka Sunil
分类号 C23C14/34;H01L21/687;H01J37/34;C23C14/50;C23C14/04;C23C14/22;H01L21/67 主分类号 C23C14/34
代理机构 Buchanan Ingersoll & Rooney PC 代理人 Buchanan Ingersoll & Rooney PC
主权项 1. An angled sputtering Physical Vapor Deposition (PVD) apparatus comprising: a wafer holder for positioning a wafer; a target holder arranged to hold a target obliquely with a predetermined angle to a surface of the wafer, and the wafer holder comprises a rotatable wafer stage configured for mounting the wafer, the diameter of the wafer being larger than that of the wafer stage, and a wafer stage outer ring which surrounds the wafer stage, the wafer stage outer ring comprises an upper portion, the inner diameter of which is larger than the diameter of the wafer stage, and a top surface of the upper portion is higher than a top surface of the wafer stage, and a lower portion of the wafer stage outer ring has an inner diameter which is smaller than the inner diameter of the upper portion and but larger than the diameter of the wafer stage and a top surface of the lower portion is lower than the top surface of the wafer stage so that the top surface of the lower portion is positioned not to contact the rear surface of the wafer mounted on the wafer stage, and a height of the top surface of the upper portion and a distance between the inner diameter of the upper portion and the wafer stage are configured so that the upper portion makes a shadow on an edge of the wafer with respect to irradiation from the obliquely held target.
地址 Tokyo JP