发明名称 NONVOLATILE MEMORY DEVICE, COMPUTING SYSTEM AND WORDLINE DRIVING METHOD THEREOF
摘要 <p>A nonvolatile memory device including a memory cell; a word line coupled to the memory cell; a drive line; a switch coupled between the word line and the drive line, and configured to electrically connect the word line and the drive line; and a voltage generator coupled to the drive line and configured to charge the drive line to a precharge voltage. The precharge voltage is higher than a bias voltage applied to the word line during a corresponding operation on the memory cell.</p>
申请公布号 KR101504342(B1) 申请公布日期 2015.03.24
申请号 KR20080049773 申请日期 2008.05.28
申请人 发明人
分类号 G11C16/08;G11C16/30;G11C16/34 主分类号 G11C16/08
代理机构 代理人
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