发明名称 Radio frequency devices with enhanced ground structure
摘要 Tunable radio frequency (RF) devices, such as phase shifters and filters, are formed by depositing thin film layers on a substrate and patterning the thin film layers by various lithography techniques. A thin film metal layer is patterned to form a plurality of capacitors and inductors, leaving at least two grounding regions that lie closely adjacent the capacitors and inductors. As patterned portions of the grounding regions are electrically isolated from each other. Performance of the devices are improved by electrically bridging the differential potential grounding regions.
申请公布号 US8988169(B2) 申请公布日期 2015.03.24
申请号 US200712300464 申请日期 2007.05.17
申请人 nGimat Co. 发明人 Hunt Andrew Tye;Zhao Zhiyong;Jiang Yongdong;Wang Xiaoyan;Choi Kwang
分类号 H03H7/00;H01P1/18;H01P1/203 主分类号 H03H7/00
代理机构 代理人
主权项 1. A radio frequency device formed from a plurality of thin films, the radio frequency structure comprising a plurality of capacitors, a plurality of inductors, and at least one signal line and at least two grounding regions, said at least two grounding regions each being located close enough to said plurality of capacitors and inductors to interact in a radio frequency spectrum, said at least two grounding regions being formed so as to electrically isolate said at least two grounding regions from each other, and the improvement wherein bridges of thin-film conductive material are patterned to electrically connect said at least two grounding regions.
地址 Atlanta GA US