发明名称 |
High speed precessionally switched magnetic logic |
摘要 |
High speed precessionally switched magnetic logic devices and architectures are described. In a first example, a magnetic logic device includes an input electrode having a first nanomagnet and an output electrode having a second nanomagnet. The spins of the second nanomagnet are non-collinear with the spins of the first nanomagnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes. In a second example, a magnetic logic device includes an input electrode having an in-plane nanomagnet and an output electrode having a perpendicular magnetic anisotropy (PMA) magnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes. |
申请公布号 |
US8988109(B2) |
申请公布日期 |
2015.03.24 |
申请号 |
US201213678877 |
申请日期 |
2012.11.16 |
申请人 |
Intel Corporation |
发明人 |
Manipatruni Sasikanth;Nikonov Dmitri E.;Young Ian A. |
分类号 |
H03K17/16;H03K19/16 |
主分类号 |
H03K17/16 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A magnetic logic device, comprising:
an input electrode comprising a first nanomagnet; an output electrode comprising a second nanomagnet, the spins of the second nanomagnet non-collinear with the spins of the first nanomagnet; and a channel region and corresponding ground electrode disposed between the input and output electrodes, the channel region having a channel direction, wherein the first nanomagnet is tilted at approximately 45 degrees in a first direction with respect to the channel direction, and the second nanomagnet is tilted at approximately 45 degrees in a second direction with respect to the channel direction, and wherein the first direction is opposite to the second direction. |
地址 |
Santa Clara CA US |