Semiconductor light emitting device having roughness layer

摘要

A semiconductor light emitting device is provided, including a substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that includes a top surface and a bottom surface. The device includes a first roughness layer having a random horn shape and formed with irregular intervals, a second roughness layer, and at least one of a first AlGaN based semiconductor layer and a second AlGaN based semiconductor layer. The second conductive semiconductor layer includes a plurality of apexes on the top surface, where the distance between at least two apexes is of about 0.3 μm to about 1.0 μm. The second roughness layer includes a lower surface having a shape corresponding to the top surface of the second conductive semiconductor layer. The second roughness layer includes an upper surface having a shape corresponding to a top surface of the first roughness layer.

主权项

1. A semiconductor light emitting device, comprising:
a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer, the second conductive semiconductor layer including a top surface and a bottom surface opposing to the top surface, the bottom surface being adjacent to the active layer; a first roughness layer disposed on the second conductive semiconductor layer and including Al material, the first roughness layer including a random horn shape and formed with irregular intervals; a second roughness layer including Ti material on the first roughness layer; and at least one of a first AlGaN based semiconductor layer disposed on the active layer and a second AlGaN based semiconductor layer disposed under the active layer, wherein the first conductive semiconductor layer includes a first GaN layer and the second conductive semiconductor layer includes a second GaN layer, wherein the second conductive semiconductor layer includes a plurality of apexes on the top surface, the distance between at least two apexes of the plurality of apexes is of about 0.3 μm to about 1.0 μm, wherein the second roughness layer includes a lower surface having a shape corresponding to the top surface of the second conductive semiconductor layer, and wherein the second roughness layer includes an upper surface having a shape corresponding to a top surface of the first roughness layer.