| 发明名称 | Method for manufacturing semiconductor device | ||
| 摘要 | The present invention relates to a method for manufacturing a heterojunction semiconductor device including an AlGaN layer, the method including the steps of (a) forming a dummy electrode in a region where a gate electrode is arranged on the AlGaN layer, (b) depositing a dielectric film on the AlGaN layer by exposing side surfaces of the dummy electrode, using a device having anisotropy, (c) forming an opening in the dielectric film by removing the dummy electrode, and (d) forming the gate electrode that extends from inside the opening onto the dielectric film in a vicinity of the opening. | ||
| 申请公布号 | US8987125(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201313910607 | 申请日期 | 2013.06.05 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Okazaki Hiroyuki;Nanjo Takuma;Suzuki Yosuke;Imai Akifumi;Suita Muneyoshi;Yagyu Eiji |
| 分类号 | H01L29/66;H01L29/778;H01L21/285;H01L29/423;H01L29/20 | 主分类号 | H01L29/66 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A method for manufacturing a heterojunction semiconductor device comprising an AlGaN layer, the method comprising: (a) forming a dummy electrode comprising a metal, in a region where a gate electrode will be arranged on the AlGaN layer; (b) anisotropically depositing a dielectric film on the AlGaN layer, leaving one or more side surfaces of the dummy electrode exposed; (c) forming an opening in the dielectric film by removing the dummy electrode; and (d) forming the gate electrode that extends from inside the opening onto the dielectric film in a vicinity of the opening. | ||
| 地址 | Chiyoda-ku JP | ||