| 发明名称 | Method of manufacturing a semiconductor device having a magnetic film using plasma etching | ||
| 摘要 | According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a first magnetic film containing boron, forming a second magnetic film free from boron, above the first magnetic film. The method further includes selectively etching the second magnetic film with respect to the first magnetic film using plasma of etching gas which contains oxygen and hydrogen and which is free from halogen. | ||
| 申请公布号 | US8987007(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201314026397 | 申请日期 | 2013.09.13 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Tomioka Kazuhiro |
| 分类号 | H01L21/00;H01L43/12 | 主分类号 | H01L21/00 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner, LLP | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner, LLP |
| 主权项 | 1. A method for manufacturing a semiconductor device comprising: forming a first magnetic film containing boron; forming a second magnetic film free from boron, above the first magnetic film; and selectively etching the second magnetic film with respect to the first magnetic film using plasma of etching gas which contains oxygen and hydrogen and which is free from halogen, wherein B2O3 is formed in the first magnetic film after the second magnetic film is selectively etched by using the plasma. | ||
| 地址 | Tokyo JP | ||