| 发明名称 | Method of forming patterns | ||
| 摘要 | A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer. | ||
| 申请公布号 | US8986554(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201213719995 | 申请日期 | 2012.12.19 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Eun-sung;Kim Kyoung-seon;Nam Jae-woo;Shin Chul-ho;Yi Shi-young |
| 分类号 | H01B13/00;H01L21/308;G03F1/00;H01L21/027;H01L21/033 | 主分类号 | H01B13/00 |
| 代理机构 | F. Chau & Associates, LLC | 代理人 | F. Chau & Associates, LLC |
| 主权项 | 1. A method of forming patterns comprising the steps of: forming a photoresist film on a substrate; exposing the photoresist film with a first dose of light to form a first area and a second area in the photoresist film; forming a first hole and a second hole by removing the first area and the second area with a first developer; exposing the photoresist film with a second dose of light to form a third area in the photoresist film between the first hole and the second hole; and forming a third hole between the first hole and the second hole by removing the third area with a second developer. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||