发明名称 |
Superluminescent diode, method of manufacturing the same, and wavelength-tunable external cavity laser including the same |
摘要 |
Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide. |
申请公布号 |
US8989229(B2) |
申请公布日期 |
2015.03.24 |
申请号 |
US201213486698 |
申请日期 |
2012.06.01 |
申请人 |
Electronics and Telecommunications Research Institute |
发明人 |
Oh Su Hwan;Yoon Ki-Hong;Kim Kisoo;Kwon O-Kyun;Kwon Oh Kee;Choi Byung-seok;Kim Jongbae |
分类号 |
H01S5/22;H01S5/026;H01S5/14;H01L33/20;H01S5/022;H01S5/062;H01S5/10;H01S5/223;H01S5/343;H01L33/00;G02B6/30;G02B6/42 |
主分类号 |
H01S5/22 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A superluminescent diode comprising:
a substrate having an active region and an optical mode size conversion region; waveguides including a ridge waveguide in the active region, a deep ridge waveguide in the optical mode size conversion region connected to the ridge waveguide; an electrode disposed on the ridge waveguide; planarizing layers disposed on an outside region of the ridge waveguide and the deep ridge waveguide on the substrate; and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers at the outside region of the ridge waveguide, wherein the ridge waveguide comprises:
a clad layer; andan ohmic contact layer disposed on the clad layer, the ohmic contact layer including a lower surface facing the substrate, an upper surface opposite to the lower surface and a side surface that connects the lower and upper surfaces, and wherein the planarizing layers cover and contact the side surface of the ohmic contact layer. |
地址 |
Daejeon KR |