发明名称 Superluminescent diode, method of manufacturing the same, and wavelength-tunable external cavity laser including the same
摘要 Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.
申请公布号 US8989229(B2) 申请公布日期 2015.03.24
申请号 US201213486698 申请日期 2012.06.01
申请人 Electronics and Telecommunications Research Institute 发明人 Oh Su Hwan;Yoon Ki-Hong;Kim Kisoo;Kwon O-Kyun;Kwon Oh Kee;Choi Byung-seok;Kim Jongbae
分类号 H01S5/22;H01S5/026;H01S5/14;H01L33/20;H01S5/022;H01S5/062;H01S5/10;H01S5/223;H01S5/343;H01L33/00;G02B6/30;G02B6/42 主分类号 H01S5/22
代理机构 Rabin & Berdo, P.C. 代理人 Rabin & Berdo, P.C.
主权项 1. A superluminescent diode comprising: a substrate having an active region and an optical mode size conversion region; waveguides including a ridge waveguide in the active region, a deep ridge waveguide in the optical mode size conversion region connected to the ridge waveguide; an electrode disposed on the ridge waveguide; planarizing layers disposed on an outside region of the ridge waveguide and the deep ridge waveguide on the substrate; and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers at the outside region of the ridge waveguide, wherein the ridge waveguide comprises: a clad layer; andan ohmic contact layer disposed on the clad layer, the ohmic contact layer including a lower surface facing the substrate, an upper surface opposite to the lower surface and a side surface that connects the lower and upper surfaces, and wherein the planarizing layers cover and contact the side surface of the ohmic contact layer.
地址 Daejeon KR