| 发明名称 |
Magnetic memory and manufacturing method thereof |
| 摘要 |
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a contact plug provided on the substrate. The contact plug includes a first contact plug, and a second contact plug provided on the first contact plug and having a smaller diameter than that of the first contact plug. The magnetic memory further includes a magnetoresistive element provided on the second contact plug. The diameter of the second contact plug is smaller than that of the magnetoresistive element. |
| 申请公布号 |
US8987846(B2) |
申请公布日期 |
2015.03.24 |
| 申请号 |
US201314018215 |
申请日期 |
2013.09.04 |
| 申请人 |
|
发明人 |
Kumura Yoshinori |
| 分类号 |
H01L29/82;H01L21/00;H01L43/02;H01L43/12;H01L27/24 |
主分类号 |
H01L29/82 |
| 代理机构 |
Holtz, Holtz, Goodman & Chick PC |
代理人 |
Holtz, Holtz, Goodman & Chick PC |
| 主权项 |
1. A magnetic memory comprising:
a substrate; a contact plug provided on the substrate, the contact plug including a first contact plug, and a second contact plug provided on the first contact plug and having a smaller diameter than a diameter of the first contact plug, and the first and second contact plugs comprising a same material; and a magnetoresistive element provided on the second contact plug, wherein the diameter of the second contact plug is smaller than a diameter of the magnetoresistive element. |
| 地址 |
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