| 发明名称 |
High voltage metal-oxide-semiconductor transistor device |
| 摘要 |
A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess. |
| 申请公布号 |
US8987813(B2) |
申请公布日期 |
2015.03.24 |
| 申请号 |
US201213571366 |
申请日期 |
2012.08.10 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Lee Chiu-Te;Lin Ke-Feng;Chang Chih-Chien;Chen Wei-Lin;Wang Chih-Chung |
| 分类号 |
H01L29/78;H01L29/06;H01L29/423;H01L29/66;H01L29/08 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A high voltage metal-oxide-semiconductor (HV MOS) transistor device comprising:
a substrate; at least an isolation structure formed in the substrate, the isolation structure having a recess formed therein; a gate formed on the substrate, the gate further comprising:
a first gate portion formed on a surface of the substrate; anda second gate portion downwardly extending from the first gate portion and formed in the recess; a gate dielectric layer formed under and contacting both the first gate portion and the second gate portion; and a source region and a drain region formed in the substrate at respective sides of the gate. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
