Memory cells having a plurality of control gates and memory cells having a control gate and a shield

摘要

Various embodiments comprise apparatuses having a number of memory cells. In one such apparatus, each cell has a plurality of control gates. For example, each of two control gates is adjacent a respective side of a charge storage structure. In another apparatus, each cell has a control gate and a shield, such as where the control gate is adjacent one side of a charge storage structure and the shield is adjacent another side of the charge storage structure. Additional apparatuses and methods are described.

主权项

1. An electronic apparatus comprising:
a memory device having a number of unit cells, each of the number of unit cells having
a first dielectric material;a charge storage structure coupled to the first dielectric material; and at least two control gates, each of the at least two control gates being capacitively coupled to the charge storage structure through a second dielectric material and arranged on opposing sides of the charge storage structure to control charge placed on the charge storage structure within the unit cell, the two control gates being spaced-apart and separated from the first dielectric material by the second dielectric material.