Photoelectric conversion device

摘要

A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

主权项

1. A photoelectric conversion device comprising:
a crystalline silicon substrate; a first silicon semiconductor layer provided on one surface of the crystalline silicon substrate, the first silicon semiconductor layer having a p-type conductivity; a first light-transmitting conductive film having a first opening and provided on the first silicon semiconductor layer; a second silicon semiconductor layer provided in the first opening and being in contact with the first silicon semiconductor layer, the second silicon semiconductor layer having a p-type conductivity; a first electrode over the second silicon semiconductor layer; and a second light-transmitting conductive film over the first electrode, wherein the first electrode partially overlaps with the second silicon semiconductor layer so that the first light-transmitting conductive film is not covered by the first electrode.