| 发明名称 |
Method of fabrication of through-substrate vias |
| 摘要 |
A method of manufacturing a through-substrate-via structure. The method comprises providing a substrate having a front-side and an opposite back-side. A through-substrate via opening is formed in the front-side of the substrate. The through-substrate-via opening does not penetrate an outer surface of the back-side of the substrate. The through-substrate-via opening is filled with a solid fill material. Portions of the substrate from the outer surface of the back-side of the substrate are removed to thereby expose the fill material. At least portions of the exposed fill material are removed to form a back-side through-substrate via opening that traverses an entire thickness of the substrate. The back-side through-substrate via opening is filled with an electrically conductive material. |
| 申请公布号 |
US8987137(B2) |
申请公布日期 |
2015.03.24 |
| 申请号 |
US201012969836 |
申请日期 |
2010.12.16 |
| 申请人 |
LSI Corporation |
发明人 |
Bachman Mark A.;Merchant Sailesh M.;Osenbach John |
| 分类号 |
H01L21/44;H01L21/768;H01L25/065 |
主分类号 |
H01L21/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a through-substrate-via structure, comprising:
providing a substrate having a front-side and an opposite back-side; forming a through-substrate via opening in the front-side of the substrate, wherein the through-substrate-via opening does not penetrate an outer surface of the back-side of the substrate; filling the through-substrate-via opening with a solid fill material; removing portions of the substrate from the outer surface of the back-side of the substrate to thereby expose the fill material; removing at least portions of the exposed fill material to form a back-side through-substrate via opening that traverses an entire thickness of the substrate; and filling the back-side through-substrate via opening with an electrically conductive material. |
| 地址 |
San Jose CA US |
