Segmented guard ring structures with electrically insulated gap structures and design structures thereof

摘要

Disclosed are guard ring structures with an electrically insulated gap in a substrate to reduce or eliminate device coupling of integrated circuit chips, methods of manufacture and design structures. The method includes forming a guard ring structure comprising a plurality of metal layers within dielectric layers. The method further includes forming diffusion regions to electrically insulate a gap in a substrate formed by segmented portions of the guard ring structure.

主权项

1. A method, comprising:
forming a guard ring structure comprising a plurality of metal layers within dielectric layers; and forming diffusion regions to electrically insulate a gap in a substrate formed by segmented portions of the guard ring structure, wherein the diffusion regions are formed in a high resistivity substrate, and a noble implant region is implanted into the high resistivity substrate, below a shallow trench isolation (STI) structure.