Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

主权项

1. A method for forming a semiconductor light emitting device, comprising:
forming a nitride semiconductor layer on a crystal substrate; forming a light emitting layer on the nitride semiconductor layer; forming a p-type layer made of a nitride semiconductor on the light emitting layer; and after removing the crystal substrate from the light emitting layer, making a thickness of the nitride semiconductor layer not more than 500 nanometers; and forming a transparent electrode on the nitride semiconductor layer, the nitride semiconductor layer being disposed between the transparent electrode and the light emitting layer, the transparent electrode having transparency to light emitted from the light emitting layer, the transparent electrode being in direct contact with the nitride semiconductor layer, a sheet resistance of the transparent electrode being not more than 10Ω/□, the transparent electrode being thinner than the nitride semiconductor layer.