| 发明名称 | Semiconductor light-emitting device and method for manufacturing same | ||
| 摘要 | A method for manufacturing a semiconductor light-emitting device includes forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer. The method includes forming a groove through the first semiconductor layer. The method includes forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove. | ||
| 申请公布号 | US8987020(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201213611393 | 申请日期 | 2012.09.12 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kojima Akihiro;Sugizaki Yoshiaki |
| 分类号 | H01L33/50;H01L23/00;H01L33/36;H01L33/38;H01L33/00;H01L33/20;H01L33/44;H01L33/48;H01L33/62 | 主分类号 | H01L33/50 |
| 代理机构 | White & Case LLP | 代理人 | White & Case LLP |
| 主权项 | 1. A method for manufacturing a semiconductor light-emitting device, comprising: forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; forming a groove through the first semiconductor layer; forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove; and forming an insulating layer on the second major surface of the first semiconductor layer and on the electrodes, the insulating layer having a first surface above a lower surface of the second semiconductor layer and a second surface which is an opposite side from the first surface, wherein the first semiconductor layer and the second semiconductor layer are formed on a substrate, the substrate is removed after the forming the insulating layer, the groove is formed after the removing the substrate. | ||
| 地址 | Minato-Ku, Tokyo JP | ||