发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having improved data reliability according to an embodiment.SOLUTION: A nonvolatile semiconductor storage device according to an embodiment includes: a first memory string that includes a first memory cell and a second memory cell; a first word line connected to a control gate of the first memory cell; a second word line connected to a control gate of the second memory cell; and a peripheral circuit controlling a data write sequence and a data read sequence. The peripheral circuit executes a failure detection operation for applying a positive first pass voltage to the first word line and the second word line in a case of executing the write sequence or the read sequence to the first memory cell.
申请公布号 JP2015056190(A) 申请公布日期 2015.03.23
申请号 JP20130187896 申请日期 2013.09.11
申请人 TOSHIBA CORP 发明人 NAGATOMI YASUSHI
分类号 G11C29/12;G11C16/02;G11C16/04;G11C16/06;G11C29/42 主分类号 G11C29/12
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