| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that reduces capacitance between a field-plate electrode and a gate electrode.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming a trench 18 in a first-conductivity-type semiconductor layer; forming a first insulating film 20 on an inner surface of the trench; forming a first conductive material 22 on the first insulating film so as to fill the trench; etching the first conductive material so that the entire first conductive material is located in the trench; etching the first insulating film so that the semiconductor layer is exposed on the inner surface at an upper portion of the trench and an upper end portion of the first conductive material is positioned on the upper side than an upper end portion of the first insulating film; re-etching the first conductive material so that the upper end portion of the first insulating film is positioned on the upper side than the upper end portion of the first conductive material after the etching; forming a second insulating film 24 covering the semiconductor layer exposed on the inner surface at the upper portion of the trench and the first conductive material; and forming a second conductive material 26 on the first insulating film and the second insulating film so as to fill the trench.</p> |
