| 摘要 |
PROBLEM TO BE SOLVED: To perform patterning with less defect by suppressing the droplets remaining on a wafer, when patterning on a substrate by wet etching a block copolymer after phase separation.SOLUTION: In a method for processing a substrate by using a block copolymer containing hydrophilic polymer and a hydrophobic polymer, a resist pattern is formed on a neutral layer and a wafer W, on which a resist pattern is formed, is coated with the block copolymer. The block copolymer is then subjected to phase separation of hydrophilic polymer and a hydrophobic polymer, before being irradiated with UV rays. Thereafter, a polar organic solvent is supplied to the wafer W from a solvent nozzle 130, dry gas is discharged to the wafer W from a first gas nozzle 140, and the polar organic solvent on the wafer W is discharged. |
