| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improving the withstand voltage of a transistor.SOLUTION: A semiconductor device includes a semiconductor substrate 1, first-conductivity-type or intrinsic-type first and second semiconductor layers 3 and 4 formed on the semiconductor substrate 1 via a first film 2, a first main electrode 8 formed on the second semiconductor layer 4, and a second main electrode 9 formed on the first main electrode 8 side of the second semiconductor layer 4 or on the side of the second semiconductor layer 4 opposite to the side on which the first main electrode 8 is formed. Moreover, the device includes a first pad layer 16 electrically connected to the first main electrode 8; and a second pad layer 22 having a first upper portion S4 in contact with the second main electrode 9, a second upper portion S5 provided with a height between an upper portion S1 and a lower portion S2 of the semiconductor substrate 1, and a third upper portion S6 facing the lower portion S2 of the semiconductor substrate 1, and electrically connected to the second main electrode 9. Further, the device includes a second-conductivity-type third semiconductor layer 23 formed between the second upper portion S5 of the second pad layer 22 and a lower portion of the first film 2. |
