SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device that allows improving the reliability of a memory cell.SOLUTION: Block selection transistors 60 are provided between a laminated body and word lines 73 in a hierarchy selection region. Each block selection transistor 60 has a plurality of semiconductor bodies 61, a plurality of gate insulating films 62, and a gate electrode 65. The plurality of semiconductor bodies 61 extend from an end portion 51 of each electrode layer WL toward each word line 73. Each of the plurality of gate insulating films 62 is provided on a side wall of each semiconductor body 61. The gate electrodes 65 face the side walls of the semiconductor bodies 61 via the gate insulating films 62.