| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows preventing short-circuit breakdown between an emitter and a collector.SOLUTION: A semiconductor device includes a first-conductivity-type first base layer. A second-conductivity-type second base layer is provided on the first base layer. A first-conductivity-type first semiconductor layer is provided on the side of the second base layer opposite to the side on which the first base layer is provided. A second-conductivity-type second semiconductor layer is provided on the side of the first base layer opposite to the side on which the second base layer is provided. A plurality of first electrodes are provided in the first semiconductor layer and the second base layer via a first insulating film. Second electrodes are provided, between the adjacent first electrodes, in the first semiconductor layer and the second semiconductor layer via a second insulating film. The resistance of the first base layer on the second electrodes side is higher than the resistance of the first base layer on the first electrodes side. |
