| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve voltage-withstanding characteristics by inhibiting flow of a leakage current caused by an inversion layer, an accumulation layer, and dislocation.SOLUTION: A semiconductor device comprises: a semiconductor substrate 1; and a first film 2 formed on the semiconductor substrate 1. The semiconductor device further comprises: a first semiconductor layer 3 which is formed on the first film 2 and has a first conductivity type or an intrinsic type; and a second semiconductor layer 4 which is formed on the first semiconductor layer 3 and has a first conductivity type or an intrinsic type. The semiconductor device further comprises second conductivity type third semiconductor layers 11, 12 which have: a first upper part S3 which contacts the first semiconductor layer 3; a second upper part S4 which contacts the first film; a first side part S5 lying between the first upper part S3 and the second upper part S4; and a second side part S6 lying between the second upper part S4 and a lower part S2 of the semiconductor substrate.</p> |
