| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which improve reliability of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming an insulation film 33 above a semiconductor substrate 11 including a cell region I; a process of forming a first conductive film 36 on the insulation film 33; patterning the first conductive film 36 to form a lower electrode 36a of a ferroelectric capacitor Q inside the cell region I; a process of forming a dummy pattern 36b outside the cell region I; a process of forming a ferroelectric film 4 on the lower electrode 36a, the dummy pattern 36b and the insulation film 33; a process of forming a second conductive film 39 on the ferroelectric film 4; and a process of patterning the second conductive film 39 to form an upper electrode 39a of the ferroelectric capacitor Q inside the cell region I.</p> |
