SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a tunneling semiconductor device that allows reducing a power-supply voltage.SOLUTION: A semiconductor device includes a semiconductor layer. A gate insulating film is provided on a surface of the semiconductor layer. A gate electrode is provided on the semiconductor layer via the gate insulating film. A first-conductivity-type drain layer is provided in the semiconductor layer located at one end side of the gate electrode. A second-conductivity-type source layer is provided in the semiconductor layer located at the other end side of the gate electrode and located under the get electrode. The impurity concentration of the source layer is substantially even under the gate electrode. Voltages with the same polarity are applied to the gate electrode and the drain layer.