| 摘要 |
The present invention provides a method for fabricating a silicon oxide film by using a film forming apparatus comprising a rotary table; a first gas supply unit for supplying a first gas toward the top of the rotary table in a first processing area; and a second gas supply unit for supplying a second gas to the top of the rotary table in a second processing area. The method comprises: continuously supplying a first gas containing silicon from the first gas supply unit; continuously supplying a hydrogen gas, which is a second gas, and an oxidizing gas from the second gas supply unit; forcing the first gas to be absorbed into a substrate stacked on the rotary table in the first processing area while rotating the rotary table; and making the first gas absorbed into the surface of the substrate and the second gas supplied to the second process area react in the second processing area. |
