发明名称 GALVANICALLY COATED OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
摘要 <p>The invention relates to an optoelectronic seminconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic seminconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.</p>
申请公布号 KR101505336(B1) 申请公布日期 2015.03.23
申请号 KR20137008900 申请日期 2011.07.27
申请人 发明人
分类号 H01L33/00;H01L33/48;H01L33/62 主分类号 H01L33/00
代理机构 代理人
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