Method of Fabricating CIGS Film

摘要

Disclosed is a method for manufacturing a CIGS thin film comprising a thin film solar cell. The CIGS thin film is formed by performing a thermal process and applying a voltage of a pulse train type to which a high level and a low level are repetitively applied. Se or Cu ions are electrodeposited by applying the voltage of the high level. Ga and In ions are electrodeposited by applying the voltage of the low level. Also, the voltage applied to a working electrode is applied with a step pulse of a three-step level. Accordingly, the GIGS thin film is formed in a fast processing time.