| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of low cost and high voltage withstand capability.SOLUTION: A semiconductor device according to an embodiment comprises: a floating drain region 21 provided in a region between a second semiconductor region 13 and a source region 17; a first gate electrode 26 provided between a drain region 15 and the floating drain region 21 on a first semiconductor region 12; and a second electrode 27 provided between the source region 17 and the floating drain region 21 on the first semiconductor region 12, in which a part of the second semiconductor region 13 overlaps below the first gate electrode 26 via a gate insulation film 25. |
