| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a manufacturing method of the same, which can simplify a structure of a layer selection part of a plurality os electrode layers.SOLUTION: A semiconductor storage device of an embodiment comprises: a laminate having a plurality of electrode layers and a plurality of insulation layers, which are alternately laminated on a substrate one by one; a channel body which pierces the plurality of electrode layers and extends in a lamination direction of the laminate; a memory film which is provided between the electrode layers and the channel body and includes a charge storage film; a plurality of contact parts which are provided at an end of each of the plurality of electrode layers in a convex shape, in which the plurality of contact parts are displaced in a planar direction of the substrate so as not to overlap each other in the lamination direction; and a plurality of plugs which extend from respective contact part toward respective circuit interconnections to connect the respective contact parts and the respective circuit interconnections. |
