| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC single crystal which is reduced in through screw dislocation, through edge dislocation, micropipe defect, basal surface dislocation, and density of a lamination defect, and a manufacturing method for such an SiC single crystal.SOLUTION: There is provided a manufacturing method for SiC single crystal in which an SiC single crystal is grown by bringing an SiC seed crystal substrate into contact with an Si-C solution having a temperature gradient of a temperature fall from the inside to the surface, The manufacturing method for SiC single crystal includes: a first process of growing an SiC single crystal having a (1-100) plane as a growth plane; a second process of exposing a {0001} plane from the grown SiC single crystal; and a third process of growing an SiC single crystal having the {0001} plane as the growth plane by using the SiC single crystal having the {0001} plane exposed as a seed crystal. |
