| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the damage due to plasma processing, when depositing an amorphous silicon layer including many silicon-hydrogen bonds.SOLUTION: In a method for processing a wafer W, having an amorphous silicon layer formed on the surface, by forming plasma in a processing container 11, process gas containing hydrogen is supplied into a processing container 11, and microwaves are supplied into the processing container 11 via a slot plate 52 as a radial line slot antenna. Consequently, plasma of the process gas is generated in the processing container 11, and hydrogen gas is injected into the amorphous silicon layer on a wafer W by that plasma.</p> |
