发明名称 |
APPARATUS AND METHOD FOR TREATING STRIP SUBSTRATE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an apparatus and method for processing a strip substrate, capable of obtaining the close contact of the strip substrate with an electrostatic chuck.SOLUTION: A method for processing a strip substrate comprises the steps of: arranging a strip substrate B on the upper surface of an electrostatic chuck 22; placing a weight plate 50A having a weight 52 and an open hole 53 on the strip substrate B so that the weight 52 is positioned at the center of the strip substrate B and a part of the strip substrate B is viewed from the open hole 53; pressing the strip substrate B on the electrostatic chuck 22; changing the inside of a vacuum vessel into a vacuum state; arranging a cover plate 60 having a size covering the whole of the strip substrate B above the weight plate 50A; forming plasma inside the vacuum vessel; attaching the strip substrate B pressed by the weight plate 50A to the electrostatic chuck 22 to closely contact the strip substrate B with the electrostatic chuck 22; taking out the cover plate 60 and the weight plate 50A; and performing plasma processing to the strip substrate B closely contacted with the electrostatic chuck 22.</p> |
申请公布号 |
JP2015056419(A) |
申请公布日期 |
2015.03.23 |
申请号 |
JP20130187019 |
申请日期 |
2013.09.10 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
NISHIMORI TOSHIHIKO;SHIMAZU TADASHI |
分类号 |
H01L21/683;C23C16/458;C23C16/505;H01L21/3065;H01L21/31 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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