| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a power semiconductor device capable of suppressing contamination due to a volatile component of an organic protective film.SOLUTION: A method for manufacturing a power semiconductor device includes: a step of providing a support section 4t on the surface of a circuit member 4; a step of applying a joining material 3B containing sinterable metal particles coated with an organic protective film onto the circuit member 4; a step of arranging a semiconductor element 2 on the joining material 3B; a step of arranging a pressurizing sheet 50 having a larger area than that of the surface of the semiconductor element 2, on the semiconductor element 2; and a step of heating the joining material 3B while pressurizing the surface of the semiconductor element 2 through the pressurizing sheet 50, and thereby joining the semiconductor element 2 and the circuit member 4. The joining step is conducted in the state where the pressurizing sheet 50 protruding from the surface of the semiconductor element 2 is supported by the support section 4t. |
