SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of achieving a high current amplification factor with a simple configuration.SOLUTION: A silicon carbide layer (10) includes collector regions (11 and 12), a base region (13), and an emitter region (14). The silicon carbide layer (10) is provided with a trench (TR) having side wall faces (SWa and SWb) reaching the base region (13) through the emitter region (14) from a first principal plane (10a). The side wall faces (SWa and SWb) include a region (SW1) having an angle of 50° or more and 70° or less macroscopically with respect to a {000-1} plane. A method for manufacturing a silicon carbide semiconductor device includes a step of forming the trench (TR). The step of forming the trench (TR) includes a step of chemically treating the first principal plane (10a) of the silicon carbide layer (10) so as to form the region.