| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device with reduced color unevenness and improved optical output.SOLUTION: A nitride semiconductor light-emitting device includes a laminated body, a first electrode, a second electrode, and a phosphor layer. The laminated body includes a first layer including a first-conductivity-type layer, a second layer including a second-conductivity-type layer, and a light-emitting layer provided between the first layer and the second layer, and contains a nitride semiconductor. The laminated body has a step portion reaching to a part of the second layer from a surface of the first layer located on the opposite side of the light-emitting layer at its center portion, and the surface of the first layer located on the opposite side of the light-emitting layer includes a first region provided on a side of the step portion and a second region surrounding the first region and having an impurity concentration higher than that of the first region. The first electrode covers the first region and the second region, and reflects emission light from the light-emitting layer. The second electrode is provided on a bottom surface of the step portion. The phosphor layer is provided on a surface of the second layer located on the opposite side of the light-emitting layer. |
