| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC single crystal which has small through dislocation density and a large growth thickness, and a manufacturing method for such an SiC single crystal.SOLUTION: There is provided a manufacturing method for SiC single crystal in which an SiC single crystal is grown by bringing an SiC seed crystal substrate into contact with an Si-C solution having a temperature gradient of a temperature fall from the inside to the surface. When the SiC single crystal is grown having a (1-100) plane as a growth plane, the temperature gradient of a surface area of the Si-C solution is made large at least once. |
