SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a composition having good processability; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises a semiconductor substrate 2 and a plurality of memory cell transistors arranged on the semiconductor substrate 2. The memory cell transistor has a gate MG which includes: a charge storage layer 4 formed via a gate insulation film formed on the semiconductor substrate 2; a first insulation film 5 formed on the charge storage layer 4; and a control gate electrode 6 formed on the first insulation film 5. The control gate includes a metal film 7 containing nitrogen in a top face and an oxide film 9 formed on the top face of the metal film 7.