发明名称 |
CLEANING SOLUTION FOR NITROGEN SURFACE OF GaN SUBSTRATE AND METHOD OF CLEANING NITROGEN SURFACE OF GaN SUBSTRATE USING THE SAME |
摘要 |
<p>The present invention relates to a washing solution for a gallium nitride substrate and a method for washing a gallium nitride substrate using the same and, more specifically, to a washing solution for a gallium nitride substrate which can minimize an increase in the surface profile of an N surface which is a facing surface contacting another substrates for a layer transition process of both side surfaces of the gallium nitride substrate and can easily remove a particle adhered on the surface simultaneously, and a method for washing a gallium nitride substrate using the same. To this end, the washing solution for washing the N surface of the gallium nitride substrate which is a facing surface contacting another substrates includes a base solution and an organic additive.</p> |
申请公布号 |
KR20150030388(A) |
申请公布日期 |
2015.03.20 |
申请号 |
KR20130109563 |
申请日期 |
2013.09.12 |
申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS |
发明人 |
PARK, JIN GOO;KIM, MIN SU;KANG, BONG KYUN;KIM, HYUN JOON;PARK, SEUNG YONG;KIM, A RA |
分类号 |
C11D7/06;C11D7/26;H01L21/302 |
主分类号 |
C11D7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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