发明名称 CLEANING SOLUTION FOR NITROGEN SURFACE OF GaN SUBSTRATE AND METHOD OF CLEANING NITROGEN SURFACE OF GaN SUBSTRATE USING THE SAME
摘要 <p>The present invention relates to a washing solution for a gallium nitride substrate and a method for washing a gallium nitride substrate using the same and, more specifically, to a washing solution for a gallium nitride substrate which can minimize an increase in the surface profile of an N surface which is a facing surface contacting another substrates for a layer transition process of both side surfaces of the gallium nitride substrate and can easily remove a particle adhered on the surface simultaneously, and a method for washing a gallium nitride substrate using the same. To this end, the washing solution for washing the N surface of the gallium nitride substrate which is a facing surface contacting another substrates includes a base solution and an organic additive.</p>
申请公布号 KR20150030388(A) 申请公布日期 2015.03.20
申请号 KR20130109563 申请日期 2013.09.12
申请人 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS 发明人 PARK, JIN GOO;KIM, MIN SU;KANG, BONG KYUN;KIM, HYUN JOON;PARK, SEUNG YONG;KIM, A RA
分类号 C11D7/06;C11D7/26;H01L21/302 主分类号 C11D7/06
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