| 发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR GRAPHENE |
| 摘要 |
FIELD: chemistry.SUBSTANCE: method of producing semiconductor graphene comprises using a graphite workpiece, exposing the entire surface of the workpiece to a stream of slow neutrons, mechanical treatment of the workpiece to separate atomic layers of graphite with a given concentration of theC isotope which determines the band-gap.EFFECT: achieving a specific concentration of theC isotope, which enables to open the band-gap by tens of meV.3 dwg |
| 申请公布号 |
RU2544266(C2) |
申请公布日期 |
2015.03.20 |
| 申请号 |
RU20130122597 |
申请日期 |
2013.05.17 |
| 申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "MOSKOVSKIJ GOSUDARSTVENNYJ UNIVERSITET PUTEJ SOOBSHCHENIJA" MGUPS (MIIT) |
发明人 |
ZHURAVLEVA LJUBOV' MIKHAJLOVNA;PLEKHANOV VLADIMIR GEORGIEVICH |
| 分类号 |
H01L21/261;B82B3/00 |
主分类号 |
H01L21/261 |
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