| 摘要 |
<p>PURPOSE: A nonvolatile memory device is provided to laminate more active patterns on the substrate by electrically connecting the active patterns by a first pad unit. CONSTITUTION: The gate patterns and the insulation patterns oxides are alternately laminated on a substrate(110). An activity pattern(ACT) is expanded according to the sidewalls of the gate patterns and insulation patterns. Data store patterns(133, 134) are formed between the gate patterns and the active patterns.</p> |
