APPARATUS AND METHOD TO DEPOSIT DOPED FILMS

摘要

A deposition apparatus comprising a vaporizer chamber configured to hold a solid precursor of a dopant element therein. Gas input and output lines are connected to the vaporizer chamber and flow rate controllers are coupled to each of the gas input and output lines. The flow rate controllers are configured to adjust a rate of carrier gas flow into and out of the vaporizer chamber through the gas input and output lines. The vaporizer chamber has a temperature controller and pressure controller to produce vapors of the solid precursor in the vaporizer chamber that can be carried with the carrier gas flow through the output line.

主权项

1. A deposition apparatus, comprising:
a vaporizer chamber configured to hold a solid precursor of a dopant element therein; gas input and output lines connected to the vaporizer chamber; and flow rate controllers coupled to each of the gas input and output lines, wherein the flow rate controllers are configured to adjust a rate of carrier gas flow into and out of the vaporizer chamber through the gas input and output lines, wherein the vaporizer chamber has a temperature controller and pressure controller to produce vapors of the solid precursor in the vaporizer chamber that can be carried with the carrier gas flow through the output line.