APPARATUS AND METHOD OF STORING DATA AT A MULTI-BIT STORAGE ELEMENT

摘要

A storage device includes a controller and a non-volatile memory that includes a three-dimensional (3D) memory. A method performed in the data storage device includes receiving, at the controller, first data to be stored at the non-volatile memory. The method further includes sending, from the controller, the first data, first dummy data, and second dummy data to the non-volatile memory to be stored at respective logical pages of a single physical page in the non-volatile memory. The single physical page includes multiple storage elements that are programmable into multiple voltage states according to a mapping of bits to states. The first dummy data and the second dummy data prevent a storage element of the single physical page from being programmed to a particular voltage state of the multiple voltage states.

主权项

1. A method comprising:
in a data storage device including a controller and a non-volatile memory that includes a three-dimensional (3D) memory and circuitry associated with operation of memory cells of the 3D memory, performing:
receiving, at the controller, first data to be stored at the non-volatile memory; andsending, from the controller, the first data, first dummy data, and second dummy data to the non-volatile memory to be stored at respective logical pages of a single physical page in the non-volatile memory,wherein the single physical page includes multiple storage elements that are programmable into multiple voltage states according to a mapping of bits to states, andwherein the first dummy data and the second dummy data are selected to prevent a particular storage element of the single physical page from being programmed to a highest voltage state of the multiple voltage states and include bit values that prevent the particular storage element of the single physical page from being programmed to the highest voltage state by prohibiting a particular data value corresponding to the highest voltage state from being stored at the particular storage element to reduce a cross-coupling effect between the particular storage element and storage elements adjacent to the particular storage element and to reduce a capacitance associated with the particular storage element.