发明名称 SELECTIVE SELF-ALIGNED PLATING OF HETEROJUNCTION SOLAR CELLS
摘要 A method for forming contacts on a photovoltaic device includes forming a heterojunction cell including a substrate, a passivation layer and a doped layer and forming a transparent conductor on the cell. A patterned barrier layer is formed on the transparent conductor and has openings therein wherein the transparent conductor is exposed through the openings in the barrier layer. A conductive contact is grown through the openings in the patterned barrier layer by a selective plating process.
申请公布号 US2015075600(A1) 申请公布日期 2015.03.19
申请号 US201314056588 申请日期 2013.10.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Hekmatshoartabari Bahman;Rieutort-Louis Warren S.
分类号 H01L31/0224;H01L31/0216;H01L31/0236 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A photovoltaic device, comprising: a heterojunction cell including a substrate, at least one passivation layer and at least one doped layer; a transparent conductor formed on the cell; a patterned barrier layer formed on the transparent conductor and having openings therein; and a plated conductive contact formed through the openings in the patterned barrier layer by a selective plating process.
地址 Armonk NY US