| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having improved electrical characteristics.SOLUTION: A nonvolatile semiconductor memory device includes: a memory cell transistor formed by sequentially laminating a first gate insulating film, a first conductive film of a first conductivity type, a first inter-electrode insulating film, and a second conductive film of the first conductivity type, formed on a semiconductor substrate; and a peripheral transistor formed by sequentially laminating a second gate insulating film, a third conductive film of a second conductivity type opposite to the first conductivity type, an inter-electrode insulating film, a fourth conductive film doped with an impurity of the first conductivity type, a barrier film, and a fifth conductive film doped with an impurity of the second conductivity type, formed on the semiconductor substrate. In the peripheral transistor, openings are formed on the barrier film, the fourth conductive film and the inter-electrode insulating film, the third conductive film is exposed, and the fifth conductive film is formed so as to come in contact with the third conductive film through the opening. |
