| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a pattern of a resist, bringing high resolution to a resist layer while suppressing a required exposure amount.SOLUTION: In a method for forming a resist pattern, a resist layer formed by coating a solution on a substrate surface is drawn or exposed, and subjected to development processing to form a resist pattern, the solution mainly containing a compound that has a main chain of repeated siloxane bonds and a composition capable of forming a solute of a solution using an organic solvent as a solvent. The method includes: a first heating treatment step of subjecting a resist layer formed by coating a solution to heating treatment at a first heating treatment temperature; a pattern drawing step of performing drawing or exposure on the resist layer after the first heating treatment step; a first development processing step of subjecting the resist layer through the pattern drawing step to development processing using a first developer liquid; a second heating treatment step of subjecting the resist layer through the first development processing step to heating treatment at a second heating treatment temperature; and a second development processing step of subjecting the resist layer through the second heating treatment step to development processing using a second developer liquid. |
